Well width study of InGaN multiple quantum wells for blue-green emitter
Identifieur interne : 003576 ( Main/Repository ); précédent : 003575; suivant : 003577Well width study of InGaN multiple quantum wells for blue-green emitter
Auteurs : RBID : Pascal:11-0016098Descripteurs français
- Pascal (Inist)
- Puits quantique multiple, Semiconducteur III-V, Composé III-V, Méthode MOVPE, Puits quantique, Nanomatériau, Mécanisme croissance, Indium, Diffraction RX, Interface, Analyse quantitative, Ségrégation, Cathodoluminescence, Formation image, Nitrure de gallium, Nitrure d'indium, Composé de l'indium, InGaN, GaN, Substrat indium, In, 8115K, 8107, 8110A, 6475.
- Wicri :
- concept : Analyse quantitative.
English descriptors
- KwdEn :
Abstract
InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the quantum well thicknesses between 3.8 and 1.1 nm on the indium incorporation and the distribution of indium in the quantum wells in growth direction were investigated. X-ray diffraction measurements show that the average indium mole fraction in the quantum wells decreases with reducing quantum well width due to a delay in the indium incorporation at the barrier/well interface. Quantitative analysis reveals a segregation length of about 2 nm as a measure of the graded region in growth direction. Cathodoluminescence imaging reveals that the spatial variation of the wavelength is reduced with decreasing quantum well thickness down to 1.7 nm. Reducing the width of the quantum well further results in an increase of the spatial wavelength variation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Well width study of InGaN multiple quantum wells for blue-green emitter</title><author><name sortKey="Hoffmann, V" uniqKey="Hoffmann V">V. Hoffmann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Netzel, C" uniqKey="Netzel C">C. Netzel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Zeimer, U" uniqKey="Zeimer U">U. Zeimer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Knauer, A" uniqKey="Knauer A">A. Knauer</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Einfeldt, S" uniqKey="Einfeldt S">S. Einfeldt</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Bertram, F" uniqKey="Bertram F">F. Bertram</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut für Experimentalphysik, Otto-von-Guericke-Universität Magdeburg</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Christen, J" uniqKey="Christen J">J. Christen</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut für Experimentalphysik, Otto-von-Guericke-Universität Magdeburg</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Saxe-Anhalt</region><settlement type="city">Magdebourg</settlement></placeName></affiliation></author><author><name sortKey="Weyers, M" uniqKey="Weyers M">M. Weyers</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Tr Nkle, G" uniqKey="Tr Nkle G">G. Tr Nkle</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kneissl, M" uniqKey="Kneissl M">M. Kneissl</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut für Festkörperphysik. Technische Universität Berlin, Hardenbergstrasse 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>10 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0016098</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0016098 INIST</idno><idno type="RBID">Pascal:11-0016098</idno><idno type="wicri:Area/Main/Corpus">003917</idno><idno type="wicri:Area/Main/Repository">003576</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Imaging</term><term>Indium</term><term>Indium compounds</term><term>Indium nitride</term><term>Interfaces</term><term>MOVPE method</term><term>Multiple quantum well</term><term>Nanostructured materials</term><term>Quantitative chemical analysis</term><term>Quantum wells</term><term>Segregation</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Puits quantique multiple</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Méthode MOVPE</term><term>Puits quantique</term><term>Nanomatériau</term><term>Mécanisme croissance</term><term>Indium</term><term>Diffraction RX</term><term>Interface</term><term>Analyse quantitative</term><term>Ségrégation</term><term>Cathodoluminescence</term><term>Formation image</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Composé de l'indium</term><term>InGaN</term><term>GaN</term><term>Substrat indium</term><term>In</term><term>8115K</term><term>8107</term><term>8110A</term><term>6475</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Analyse quantitative</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the quantum well thicknesses between 3.8 and 1.1 nm on the indium incorporation and the distribution of indium in the quantum wells in growth direction were investigated. X-ray diffraction measurements show that the average indium mole fraction in the quantum wells decreases with reducing quantum well width due to a delay in the indium incorporation at the barrier/well interface. Quantitative analysis reveals a segregation length of about 2 nm as a measure of the graded region in growth direction. Cathodoluminescence imaging reveals that the spatial variation of the wavelength is reduced with decreasing quantum well thickness down to 1.7 nm. Reducing the width of the quantum well further results in an increase of the spatial wavelength variation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>312</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Well width study of InGaN multiple quantum wells for blue-green emitter</s1></fA08><fA11 i1="01" i2="1"><s1>HOFFMANN (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>NETZEL (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZEIMER (U.)</s1></fA11><fA11 i1="04" i2="1"><s1>KNAUER (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>EINFELDT (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>BERTRAM (F.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHRISTEN (J.)</s1></fA11><fA11 i1="08" i2="1"><s1>WEYERS (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>TRÄNKLE (G.)</s1></fA11><fA11 i1="10" i2="1"><s1>KNEISSL (M.)</s1></fA11><fA14 i1="01"><s1>Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Stree 4</s1><s2>12489 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Institut für Festkörperphysik. Technische Universität Berlin, Hardenbergstrasse 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Institut für Experimentalphysik, Otto-von-Guericke-Universität Magdeburg</s1><s2>39106 Magdeburg</s2><s3>DEU</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>3428-3433</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000191392610030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0016098</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>InGaN/GaN multiple quantum well structures emitting in the blue/green wavelength region were grown by metal organic vapor phase epitaxy. By reducing the quantum well growth time the influence of the quantum well thicknesses between 3.8 and 1.1 nm on the indium incorporation and the distribution of indium in the quantum wells in growth direction were investigated. X-ray diffraction measurements show that the average indium mole fraction in the quantum wells decreases with reducing quantum well width due to a delay in the indium incorporation at the barrier/well interface. Quantitative analysis reveals a segregation length of about 2 nm as a measure of the graded region in growth direction. Cathodoluminescence imaging reveals that the spatial variation of the wavelength is reduced with decreasing quantum well thickness down to 1.7 nm. Reducing the width of the quantum well further results in an increase of the spatial wavelength variation.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="04" i2="3"><s0>001B60D75</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>MOVPE method</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Puits quantique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum wells</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Interface</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Interfaces</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Analyse quantitative</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Quantitative chemical analysis</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Ségrégation</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Segregation</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cathodoluminescence</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Cathodoluminescence</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Formation image</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Imaging</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Indium compounds</s0><s5>29</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Substrat indium</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>6475</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>010</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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